6n138/ 6n139 document number 83605 rev. 1.5, 26-oct-04 vishay semiconductors www.vishay.com 1 i179082 1 2 3 4 8 7 6 5 v cc v b v 0 gnd nc a c nc pb p b -free e3 high speed optocoupler, 100 kbd, low input current, photodiode darlington output features ? high current transfer ratio, 300 % low input current, 0.5 ma high output current, 60 ma isolation test voltage, 5300 v rms ttl compatible output, v ol = 0.1 v high common mode rejection, 500 v/ s adjustable bandwidth-access to base standard molded dip plastic package lead-free component component in accordance to rohs 2002/95/ec and weee 2002/96/ec agency approvals ul1577, file no. e52744 system code h or j, double protection din en 60747-5-2 (vde0884) din en 60747-5-5 pending available with option 1 applications logic ground isolation-ttl/ttl, ttl/cmos, cmos/ cmos, cmos/ttl eia rs 232 line receiver low input current line receiver-long lines,party lines telephone ring detector 117 vac line voltage status indication-low input power dissipation low power systems-ground isolation description high common mode transient immunity and very high current ratio together with 5300 v rms insulation are achieved by coupling and led with an integrated high gain photo detector in an eight pin dual-in-line pack- age. separate pins for the photo diode and output stage enable ttl compatible saturation voltages with high speed operation. photo darlington operation is achieved by tying the v cc and v o terminals together. access to the base terminal allows adjustment to the gain bandwidth. the 6n138 is ideal for ttl applications since the 300 % minimum current transfer ratio with an led current of 1.6 ma enables operation with one unit load-in and one unit load-out with a 2.2 k ? pull-up resistor. the 6n139 is best suited for low power logic applica- tions involving cmos an d low power ttl. a 400 % current transfer ratio with only 0.5 ma of led current is guaranteed from 0 c to 70 c caution: due to the small geometries of this device, it should be handled with electrostatic disc harge (esd) precautions. proper grounding would prevent damage further and/or degradation which may be induced by esd. order information for additional information on t he available options refer to option information. part remarks 6n138 ctr > 300 %, dip-8 6n139 ctr > 500 %, dip-8 6n138-x007 ctr > 300 %, smd-8 (option 7) 6n138-x009 ctr > 300 %, smd-8 (option 9) 6N139-X007 ctr > 500 %, smd-8 (option 7) 6n139-x009 ctr > 500 %, smd-8 (option 9)
www.vishay.com 2 document number 83605 rev. 1.5, 26-oct-04 6n138/ 6n139 vishay semiconductors absolute maximum ratings t amb = 25 c, unless otherwise specified stresses in excess of the absolute maximum ratings can caus e permanent damage to the device. f unctional operation of the device is not implied at these or any other conditions in excess of those given in the operati onal sections of this document. exposure to absolute maximum rating for extended periods of the time can adversely affect reliability. input output coupler 1) derate linearly above 50 c free-air temperature at a rate of 0.4 ma/c 2) derate linearly above 50 c free-air temperature at a rate of 0.7 mw/c 3) derate linearly above 25 c free-air temperature at a rate of 0.7 ma/c 4) derate linearly above 25 c free-air temperature at a rate of 2.0 mw/c parameter test condition symbol value unit reverse voltage v r 5.0 v forward current i f 25 ma average input current i f(avg) 20 ma input power dissipation 1), 3) p diss 35 mw parameter test condition part symbol value unit supply and output voltage pin 8-5, pin 6-5 6n138 v cc , v o - 0.5 to 7.0 v pin8-5, pin 6-5 6n139 v cc , v o - 0.5 to 18 v emitter base reverse voltage pin 5-7 0.5 v peak input current 50 % duty cycle - 1.0 ms pulse width 40 ma peak transient input current t p 1.0 s, 300 pps 1.0 a output current pin 6 i o 60 ma output power dissipation 2), 4) p diss 100 mw parameter test condition symbol value unit isolation test voltage v iso 5300 v rms isolation resistance v io = 500 v, t amb = 25 c r io 10 12 ? v io = 500 v, t amb = 100 c r io 10 11 ? storage temperature t stg - 55 to + 125 c operating temperature t amb - 55 to + 100 c lead soldering temperature t = 10 s t sld 260 c
6n138/ 6n139 document number 83605 rev. 1.5, 26-oct-04 vishay semiconductors www.vishay.com 3 electrical characteristics t amb = 25 c, unless otherwise specified minimum and maximum values are testing requirements. typical val ues are characteristics of the device and are the result of eng ineering evaluation. typical values are for information only and are not part of the testing requirements. input output 6) pin 7 open coupler 7) device considered a two-termi nal device: pins 1, 2, 3 and 4 shorted together and pins 5, 6, 7, and 8 shorted together. parameter test condition symbol min ty p. max unit input forward voltage i f = 1.6 ma v f 1.4 1.7 v input reverse breakdown voltage i r = 10 abv r 5.0 v temperature coefficient of forward voltage i f = 1.6 ma - 1.8 mv/c parameter test condition part symbol min ty p. max unit logic low, output voltage 6) i f = 1.6 ma, i o = 4.8 ma, v cc = 4.5 v 6n138 v ol 0.1 0.4 v i f = 1.6 ma, i o = 8.0 ma, v cc = 4.5 v 6n139 v ol 0.1 0.4 v i f = 5.0 ma, i o = 15 ma, v cc = 4.5 v 6n139 v ol 0.15 0.4 v i f = 12 ma, i o = 24 ma, v cc = 4.5 v 6n139 v ol 0.25 0.4 v logic high, output current 6) i f = 0 ma, v cc = v cc = 7.0 v 6n138 i oh 0.1 250 a i f = 0 ma, v cc = v cc = 18 v 6n139 i oh 0.05 100 a logic low supply current 6) i f = 1.6 ma, v o = open, v cc = 18 v i ccl 0.2 1.5 ma logic high supply current 6) i f = 0 ma, v o = open, v cc = 18 v i cch 0.001 10 a parameter test condition symbol min ty p. max unit input capacitance f = 1.0 mhz, v f = 0 c in 25 pf input output insulation leakage current 7) 45 % relative humidity, t amb = 25 c, t = 5.0 s, v io = 3000 vdc 1.0 a resistance (input output) 7) v io = 500 vdc r io 10 12 ? capacitance (input-output) 7) f = 1.0 mhz c io 0.6 pf
www.vishay.com 4 document number 83605 rev. 1.5, 26-oct-04 6n138/ 6n139 vishay semiconductors current transfer ratio 5) dc current transfer ratio is defined as the ratio of output collector current, i o , to the forward led input current, i f times 100 %. 6) pin 7 open switching characteristics 6) pin 7 open 8) using a resistor between pin 5 and 7 will decrease gain and delay time. common mode transient immunity 9) common mode transient immunity in logic high level is the maximum tolerable ( positive) dvcm/dt on the leading edge of the comm on mode pulse, v cm , to assure that the output will re main in a logic high state (i.e. v o > 2.0 v) common mode transient immunity in logic low level is the maximum tolerable (negative) dvcm/dt on the trailing edge of the common mode pulse signal, v cm to assure that the output will remain in a logic low state (i.e. v o < 0.8 v). 10) in applications where dv/dt may exceed 50,000 v/ s (such as state discharge) a series resistor, r cc should be included to protect i c from destructively hi gh surge currents.the recommend value is r cc ? [(1 v)/(0.15 i f (ma)] k ? parameter test condition part symbol min ty p. max unit current transfer ratio 5), 6) i f = 1.6 ma, v o = 0.4 v, v cc = 4.5 v 6n138 ctr 300 1600 % current transfer ratio i f = 0.5 ma, v o = 0.4 v, v cc = 4.5 v 6n139 ctr 400 1600 % i f = 1.6 ma, v o = 0.4 v, v cc = 4.5 v 6n139 ctr 500 2000 % parameter test condition part symbol min ty p. max unit propagation delay time to logic low at output i f = 1.6 ma, r l = 2.2 k ? 6n138 t phl 2.0 10 s propagation delay time to logic low at output 6) , 8) i f = 0.5 ma, r l = 4.7 k ? 6n139 t phl 6.0 25 s i f = 12 ma, r l = 270 ? 6n139 t phl 0.6 1.0 s propagation delay time to logic high at output i f = 1.6 ma, r l = 2.2 k ? 6n138 t plh 2.0 35 s i f = 0.5 ma, r l = 4.7 k ? 6n139 t plh 4.0 60 s propagation delay time to logic high at output 6) , 8) i f = 12 ma, r l = 270 ? 6n139 t plh 1.5 7.0 s parameter test condition symbol min ty p. max unit common mode transient immunity, logic high level output 9) , 10) i f = 0 ma, r l = 2.2 k ? , r cc = 0, |v cm | = 10 v p-p | cm h | 500 v/ s common mode transient immunity, logic low level output 9) , 10) i f = 1.6 ma, r l = 2.2 k ? , r cc = 0, |v cm | = 10 v p-p | cm l | - 500 v/ s
6n138/ 6n139 document number 83605 rev. 1.5, 26-oct-04 vishay semiconductors www.vishay.com 5 package dimensions in inches (mm) i178006 pin one id .255 (6.48) .268 (6.81) .379 (9.63) .390 (9.91) .030 (0.76) .045 (1.14) 4 typ. .100 (2.54) typ. 10 3C9 .300 (7.62) typ. .018 (.46) .022 (.56) .008 (.20) .012 (.30) .110 (2.79) .130 (3.30) .130 (3.30) .150 (3.81) .020 (.51 ) .035 (.89 ) .230(5.84) .250(6.35) 4 3 2 1 .031 (0.79) .050 (1.27) 5 6 78 iso method a .315 (8.0) min. .300 (7.62) typ . .180 (4.6) .160 (4.1) .331 (8.4) min. .406 (10.3) max. .028 (0.7) min. option 7 18494 min. .315 (8.00) .020 (.51) .040 (1.02) .300 (7.62) ref. .375 (9.53) .395 (10.03) .012 (.30) typ. .0040 (.102) .0098 (.249) 15 max. option 9
www.vishay.com 6 document number 83605 rev. 1.5, 26-oct-04 6n138/ 6n139 vishay semiconductors ozone depleting substances policy statement it is the policy of vishay semiconductor gmbh to 1. meet all present and future national and international statutory requirements. 2. regularly and continuously improve the performan ce of our products, processes, distribution and operatingsystems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. it is particular concern to control or eliminate rele ases of those substances in to the atmosphere which are known as ozone depleting substances (odss). the montreal protocol (1987) and its london amendments (1990) intend to severely restrict the use of odss and forbid their use within the next ten years. various national and international initiatives are pressing for an earlier ban on these substances. vishay semiconductor gmbh has been able to use its po licy of continuous improvements to eliminate the use of odss listed in the following documents. 1. annex a, b and list of transitional substances of the montreal protocol and the london amendments respectively 2. class i and ii ozone depleting substances in the clean air act amendments of 1990 by the environmental protection agency (epa) in the usa 3. council decision 88/540/eec and 91/690/eec annex a, b and c (transitional substances) respectively. vishay semiconductor gmbh can certify that our semi conductors are not manufactured with ozone depleting substances and do not co ntain such substances. we reserve the right to make changes to improve technical design and may do so without further notice. parameters can vary in different applications. all operating parameters must be validated for each customer application by the customer. should the buy er use vishay semiconductors products for any unintended or unauthorized application, the buyer sh all indemnify vishay semiconductors against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. vishay semiconductor gmbh, p.o.b. 3535, d-74025 heilbronn, germany telephone: 49 (0)7131 67 2831, fax number: 49 (0)7131 67 2423
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